Why flash memory perferred more than other memory in 2mark?
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Flash memory is used in enterprise server, storage and networking technology, as well as in a wide range of consumer devices, including USB flash drives, mobile phones, digital cameras, tablet computers, PC cards in notebook computers and embedded controllers . For instance, NAND flash-based solid-state drives are often used to accelerate the performance of I/O-intensive applications. NOR flash memory is often used to hold control code, such as the basic input/output system (BIOS), in a PC.
Flash memory is seeing growing use for in-memory computing to help speed performance and increase the scalability of systems that manage and analyze increasingly large sets of data.
Dr. Fujio Masuoka is credited with the invention of flash memory when he worked for Toshiba in the 1980s. Masuoka's colleague, Shoji Ariizumi, reportedly coined the term flash because the process of erasing all the data from a semiconductor chip reminded him of the flash of a camera.
Flash memory evolved from erasable programmable read-only memory (EPROM ) and electrically erasable programmable read-only memory (EEPROM ). Flash is technically a variant of EEPROM, but the industry reserves the term EEPROM for byte-level erasable memory and applies the term flash memory to larger block-level erasable memory.
Electrons are added to or removed from the floating gate to change the storage transistor's threshold voltage. Changing the voltage affects whether a cell is programmed as a zero or a one
EPROM and EEPROM cells operate similarly to flash memory in how data is written, or programmed, but differ from flash memory in how data is erased.
Flash memory consists of a transistor and a floating gate that stores the electric current.
Flash memory is seeing growing use for in-memory computing to help speed performance and increase the scalability of systems that manage and analyze increasingly large sets of data.
Dr. Fujio Masuoka is credited with the invention of flash memory when he worked for Toshiba in the 1980s. Masuoka's colleague, Shoji Ariizumi, reportedly coined the term flash because the process of erasing all the data from a semiconductor chip reminded him of the flash of a camera.
Flash memory evolved from erasable programmable read-only memory (EPROM ) and electrically erasable programmable read-only memory (EEPROM ). Flash is technically a variant of EEPROM, but the industry reserves the term EEPROM for byte-level erasable memory and applies the term flash memory to larger block-level erasable memory.
Electrons are added to or removed from the floating gate to change the storage transistor's threshold voltage. Changing the voltage affects whether a cell is programmed as a zero or a one
EPROM and EEPROM cells operate similarly to flash memory in how data is written, or programmed, but differ from flash memory in how data is erased.
Flash memory consists of a transistor and a floating gate that stores the electric current.
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