Why silicon is preferred over germanium in the fabrication of ic?
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1. Low Reverse Leakage Current:
The reverse current in silicon flows in order of nano amperes compared to germanium in which the reverse current is in order of micro amperes, because of this the accuracy of non-conduction of the Ge diode in reverse bias falls down. Whereas Si diode retains it property to a greater extent i.e., it allows negligible amount of current to flow.
2. Good Temperature Stability:
Temperature stability of silicon is good, it can withstand in temperature range typically 140C to 180C whereas Germanium is much temperature sensitive only up to 70C.
3. Low Cost:
Silicon is relatively easy and inexpensive to obtain and process, whereas Germanium is rare material that is typically found with copper, lead or silver deposits. Because of its rarity, germanium is more expensive to work with, thus making germanium diodes more difficult to find (and sometimes more expensive) than silicon diodes.
4. High Reverse Break Down Voltage:
The Si diode has large reverse breakdown voltage about 70-100V compared to Ge which has the reverse breakdown voltage around 50V.
5. Large Forward Current:
Silicon is much better for high current applications as it has very high forward current in a range of tens of amperes, whereas germanium diodes have very small forward current in a range of micro amperes.
The reverse current in silicon flows in order of nano amperes compared to germanium in which the reverse current is in order of micro amperes, because of this the accuracy of non-conduction of the Ge diode in reverse bias falls down. Whereas Si diode retains it property to a greater extent i.e., it allows negligible amount of current to flow.
2. Good Temperature Stability:
Temperature stability of silicon is good, it can withstand in temperature range typically 140C to 180C whereas Germanium is much temperature sensitive only up to 70C.
3. Low Cost:
Silicon is relatively easy and inexpensive to obtain and process, whereas Germanium is rare material that is typically found with copper, lead or silver deposits. Because of its rarity, germanium is more expensive to work with, thus making germanium diodes more difficult to find (and sometimes more expensive) than silicon diodes.
4. High Reverse Break Down Voltage:
The Si diode has large reverse breakdown voltage about 70-100V compared to Ge which has the reverse breakdown voltage around 50V.
5. Large Forward Current:
Silicon is much better for high current applications as it has very high forward current in a range of tens of amperes, whereas germanium diodes have very small forward current in a range of micro amperes.
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