Question

working principle of scr​

Answer 1

Some sources define silicon-controlled rectifiers and thyristors as synonymous,[5] other sources define silicon-controlled rectifiers as a proper subset of the set of thyristors, those being devices with at least four layers of alternating n- and p-type material.[6][7]According to Bill Gutzwiller, the terms "SCR" and "controlled rectifier" were earlier, and "thyristor" was applied later, as usage of the device spread internationally.[8]

SCRs are unidirectional devices (i.e. can conduct current only in one direction) as opposed to TRIACs, which are bidirectional (i.e. current can flow through them in either direction). SCRs can be triggered normally only by 

Answer 2

The two simple analogues to explain the basic action for the thyristor are those of the diode and the two transistor models.

1. Diode Model. The thyristor is similar to three diodes in series as there are three P-N junctions. Without gate bias, there is always at least one reverse biased junction to prevent conduction irrespective of the polarity of an applied voltage between anode and cathode. If the anode is made positive and the gate is also biased positively with respect to cathode, the P-layer at the gate is flooded by the electrons from the cathode and loses its identity as a P-layer. Accordingly the thyristor becomes equivalent to a conducting diode.

Scr working

2. Two Transistor Model. Imagine the SCR cut along the dotted line, as shown in fig. a. Then we can have two devices, as shown in fig.b. These two devices can be recognized as two transistors.  The upper left one is P-N-P transistor and the lower right N-P-N type. Further it can be recognized that the base of the P-N-P transistor is joined to the collector of the N-P-N transistor while the collector of P-N-P is joined to the base of N-P-N transistor, as illustrated in fig. c. The gate terminal is brought out from the base of the N-P-N material. This construction has been conceived merely to explain the working of SCR, otherwise in physical shape the SCR has four solid layers of P-N-P-N type only.

Now we can see that the two transistors are connected in such a manner that the collector of Q1 is connected to the base of Q2 i.e. the output collector current of Qt becomes the base current for Q2. In the similar way the collector of Q2 is joined to the base of Q1 which shows that the output collector current of Q2 is fed to Q1 as input base current. These are back to back connections of transistors in such a way that the output of one goes into as input of other transistor and vice-versa. This gives net gain of loop circuit as β1 x β2 where β1 and β2 are current gains of two transistors respectively.

When the gate current is zero or the gate terminal is open, the only current in circulation is the leakage current, which is very small in case of silicon device specially and the total current is a little higher than sum of individual leakage currents. Under these conditions P-N-P-N device is said to be in its forward blocking or high impedance ‘off state. As soon as a small amount of gate current is given to the base of transistor Q2 by applying forward bias to its base-emitter junction, it generates the collector current as β2 times the base current. This collector current of Q2 is fed as input base current to Q: which is further multiplied by β1 times as ICl which forms input base current of Q2 and undergoes further amplification. In this way both transistors feedback each other and the collector current of each goes on multiplying. This process is very quick and soon both the transistors drive each other to saturation. Now the device is said to be in.on-state. The current through the on-state SCR is controlled by external impedance only. The figure a and b are shown below