Question

A Ge semiconductor sample has an area of (1*10^-3) cm^2 " and a length of (10) micro-meter is doped with Nd=(1x10^18) cm^-3, the sample is then optically excited resulting in an optical generation rate of (1*10^20) cm^-3 m excess EHPS, assume the recombination life times of both electrons and holes are equal to 1 micro-second. The change of the sample resistance after excitation will be: A. 9.292e-8 B. 0.09292 Ohm C. 0.1000 Ohm D. 21.00 Ohm E. 10.76 Ohm

Answer 1

Answer:

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