Question

A p-n junction diode has breakdown voltage of 28V. If applied external in reverse bias is 40 V the current through it is

Answer 1

Answer:

Under the condition when a p-n junction is reverse biased, the applied reverse voltage is increased, the electric field across the p-n junction increases because in the depletion region across the p-n junction, there are equal two opposite charges stored. As a result of high electron field across the junction under reverse biased condition, the breakdown of charge carriers takes place. Therefore, current increases rapidly. This is because

ϵ=

−

d r

d V

, when both p and n regions are heavily doped, a depletion layer is very thin. So, electron field is maximum at the junction.

hope it helps...

Answer 2

Answer:

The current through the diode will become infinite.

Explanation:

P-N Junction Diode: P-n junction is a border between p(positive) type and n(negative) type semiconductor.

Reverse Bias: If the p-type is connected to the negative terminal and n-type is connected to the positive terminal of a battery then the p-n junction becomes reverse biased.

Once the external voltage exceeds the breakdown voltage the more number of electrons inside the semiconductor starts to flow. It increases the current flow.

• In the mentioned diode external voltage > breakdown voltage.

• Rate of flow of electrons is very high.

• So current becomes infinite.