Question

A silicon PN diode has a forward current of 20 mA at room temperature. Given, the diffusion length of electron and hole is equal to 10 um, the mobility of electron and hole at room temperature are 1300 cm2/V-s and 500 cm2/V-s, respectively, the Boltzman constant is 8.617*10-5 eV/K. Then calculate

(a) The diffusion constants of electron (Dn) and hole (D­p).

(b) The diffusion capacitance of the diode.

Answer 1

Answer: so here is your answer

Explanation:Example (1):

Write the electronic configuration of silicon has 14 electrons in its atom,

determine in which sub shell and in which orbit and how many electrons in

the highest sub shell energy.

Solution:

The electronic configuration of silicon as follows,

1S2 2S2 2p6 3S2 3p2

The highest sub shell energy lies in (M) orbit, in the sub shell (p) which

is not fully occupied , it has only 2 electrons

Example (2):

Write the electronic configuration of iodine (I) has 53 electrons in its

atom, determine in which sub shell and in which orbit and how many

electrons in the highest sub shell energy.

Solution:

The electronic configuration of iodine (I) as follows,

1S2 2S2 2p6 3S2 3p6 3D10 4S2 4p6 4D10 4F7

The highest sub shell energy lies in (N) orbit, in the sub shell (F) is not

fully occupied, it has only seven electrons

Example (3):

Write the electronic configuration of Tantalum 73 has 73 electrons in its

atom, determine in which sub shell and in which orbit and how many

electrons in the highest sub shell energy.