Question

An intrinsic Si wafer is doped with 5×1016/cc phosphorous atoms and 6×1016/cc boron atoms. Assume that at 300K, the intrinsic carrier concentration in Si is 1010/cc and all the dopant atoms are ionized. What is the location of the Fermi level with respect to the conduction band edge at 300K? (Assume the effective density of states at the conduction band edge, NC=2.82×1019/cc)

Answer 1

Phosphorus atoms are considered as donors or in other words they have the propensity to lose electrons.

In addition the concentration of the subatomic particle is 5*1016, therefore it is important to focus on the complete ionization at room temperature.

One should us the neutrality equation to resolve the problem. The correct formula is p-n +N_d + -N_A=0

Answer 2

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HERE IS UR ANSWER

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Phosphorus atoms are donors as they have ability to lose electrons.