Question

Assertion : The energy gap between the valence band and conduction band is greater in silicon than in germanium. Reason : Thermal energy produces fewer minority carriers in silicon than in germanium.

Answer 1

The energy gap between valence band and conduction band in germanium is 0.76 eV and the energy gap between valence band and conduction band in silicon is 1.1 eYV Also, it is true that thermal energy produces fewer minority carriers in silicon than in germanium.

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