At 300 K, for a diode current of 1 mA, a certain germanium diode requires a
forward bias of 0.1435 V, whereas a certain silicon diode requires a forward bias
of 0.718 V. Under the conditions state above, the closest approximation of the
ratio of reverse saturation current in germanium diode to that in silicon diode is
(A) 1 (B) 5
(C) 4*10^3 (D) 8*10^3
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(C) 4*10^3 Is the Answer..
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