Question

For an n- channel enhancement type MOSFET, if the source is connected at a
higher potential than that of the bulk (i.e. VSB > 0), the threshold voltage VT of
the MOSFET will
(A) remain unchanged (B) decrease
(C) change polarity (D) increase

Answer 1

So for we considered that substrate or body is connected to source

and held at ground.

≥

For n – channel device VSB be +ve i.e. (change in threshold voltage)

∆ is always positive. So as VSB > 0, the VT will increase.

REF: NEAMAN

Option (d)

Answer 2

The correct answer among all is option (A) remain unchanged.

Explanation:

• The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also called as the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of insulated-gate field-effect transistor which is fabricated by the controlled oxidation of a semiconductor, mainly silicon.
• For an n- channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (i.e. VSB > 0), the threshold voltage VT of the MOSFET will remain unchanged.
• VT depends on MOSFET construction, hence it is Independent from MOSFET parameters.