Avalanche breakdown in semiconductor diode occurs when
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Avalanche breakdown occurs when both sides of junction are lightly doped
Consequently the depletion layer is large. In this case, electric field across the depletion layer is not too strong. Here, the minority carriers are accelerated by the applied voltage and collide with the semiconductor atoms in the depletion region. Due to the collision with valence electrons, covalent bonds are broken down and electron hole pairs are formed. These new carriers acquire energy from applied potential and in turn produce additional carriers. This forms a cumulative process called avalanche multiplications. The breakdown is called Avalanche breakdown
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Source: Akash Series, page 250
Avalanche breakdown occurs when both sides of junction are lightly doped
Consequently the depletion layer is large. In this case, electric field across the depletion layer is not too strong. Here, the minority carriers are accelerated by the applied voltage and collide with the semiconductor atoms in the depletion region. Due to the collision with valence electrons, covalent bonds are broken down and electron hole pairs are formed. These new carriers acquire energy from applied potential and in turn produce additional carriers. This forms a cumulative process called avalanche multiplications. The breakdown is called Avalanche breakdown
Hope it helped
Source: Akash Series, page 250
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Explanation:
Avalanche breakdown is a phenomenon that can occur in both insulating and semiconducting materials. It is a form of electric current multiplication that can allow very large currents within materials which are otherwise good insulators. It is a type of electron avalanche
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