Question

Calculate the intrinsic carrier concentration of silicon at 300k

Answer 1

Answer:

Consider an n-type silicon semiconductor at T = 300°K in which Nd = 1016 cm-3 and Na = 0. The intrinsic carrier concentration is assumed to be ni = 1.5 x 1010 cm-3. - Comment Nd >> ni, so that the thermal-equilibrium majority carrier electron concentration is essentially equal to the donor impurity concentration

Answer 2

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ni = 1.5 x 1010 cm-3. - Comment Nd >> ni, so that the thermal-equilibrium majority carrier electron concentration is essentially equal to the donor impurity concentration