Question

Comparison between silicon and germanium diodes

Answer 1

The primary difference between silicon and germanium diodes is the voltage needed for the diode to turn on (or become “forward-biased”). Silicon diodes require 0.7 volts to become forward-biased, whereas germanium diodes require only 0.3 volts to become forward-biased.

Answer 2

Answer:

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☘ Germanium Diode :

• The maximum value of PIV is 400voltage.
• The maximum temperature rating is100° C.
• It has lower current rating
• Knee voltage is equal to 0.3 V
• Leakage current is larger for germanium

☘Silicon Diode :

• It has PIV rating around 1000 V
• It has wider temperature range. Silicon can be used for application in which temperature may arise about 200°C
• It has higher current rating
• Knee voltage is 0.7 V
• Leakage current is very small.

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