Consider a Al-SiO2-Si MOS device with donor density in silicon, Nd = 5 x 10^15 cm-3. The work function of Al is Al = 4.1 V and the electron affinity of Si and SiO2 are X si = 4.05 V and Xsio2 = 0.95 V, respectively. Calculate the conduction band discontinuity at the semiconductor-oxide interface. Give your answer in unit of eV. Answers within 5% error will be considered correct.
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