describe the proceedings of the carrier hu
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Lifetime Measurement Techniques and Results Discussions
3.1. Photo-Induced Open-Circuit Voltage Decay Method
Theoretically, when the HgCdTe photodiode is excited by the pulsed laser, the photoresponse shows a rapid increase and slow decay process. As it has been analyzed in the previous report [8, 9], however, the decay curve profiles are dominated by the RC discharge time constant and trap energy level capture effects on excess carrier’s relaxation. In order to minimize the effects of the equivalent junction capacitor and the carrier traps in the HgCdTe photodiode, a constant background illumination has been introduced in the traditional OCVD method, which can be called photo-induced open-circuit voltage decay (PIOCVD) method.
The composition of Hg1-xCdxTe in our experiments is , , , and . The detectors were processed into μm2 area of planar structures. By increasing the bias light intensity, the steady-state photovoltage will saturate the junction potential barrier of the photodiode. When the steady-state photovoltage does not increase with the rising of the background intensity, the photogenerated carriers recombination will dominate the decay time constant, which is related to the minority carrier lifetime. In agreement with this picture, photovoltage transient decay can be fitted by a one-order exponential function.
Figure 1 shows the situation that the DC photovoltage has been saturated. The photovoltage transient decay time constant can be determined from the best fit to the experiment, and consequently the minority carrier lifetime is obtained. The results show that the minority carrier lifetime is in the range of 18~407 ns for = 0.231~0.4186 at 77 K. With the Cd composition increasing, the minority carrier lifetimes show an increasing tendency. By comparing the lifetime values of different pixels in one-component array, it is found that there are some distinctions between the different pixels, which can be attributed to the nonuniformity of the HgCdTe material or due to the fabrication process variations of the detector.
Answer:
Minerals occurs mainly in these forms :-
01 ) In metamorphic and igneous rocks
>> found in crakes .
>> smaller occurance is known as "veins".
>> larger occurance is known as " lodes".
>> found in liquid or molten state .
>> ex :- tin , copper , zinc , lead , etc .
02 ) In sedimentary rocks
>> occurance in beds or layers .
>> formed of decomposition or accumulation .
>> ex :- coal , some forms of iron , gypsum , potash , petroleum , etc
03 ) By decomposition of surface rocks
>> ex :- bauxite .
04 ) Alluvial deposits
>> in sandy or valley region
>> they are known as placer deposits
>> ex :- gold , silver , platinum
05 ) Ocean occurance
>> in beds of ocean
>> ex :- common salt , magnesium , bromine
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