Question

Difference between saturation and leakage current ?

Answer 1

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Difference between reverse saturation current and leakage current

A quick answer to your question is no they are not the same. On a IV Characteristic curve of a PN junction diode, you will generally have a very low reverse bias current (Leakage current). ... The 'Reverse Saturation Current' is also called the 'Zener Breakdown' or the 'Avalanche Region'.

Answer 2

They are unrelated.

A pn junction is a diffusion current dominated device. The equations for pn junctions account for diffusion current, not drift current.

On the other hand, MOS transistor equations arise from drift current. Hence the difference in the equations. Diffusion current leads to exponentials. Drift current leads to square law equations.

Let’s look at the reverse saturation current.

Is=qA(Dpτp−−−√n2iND+Dnτn−−−√n2iNA)

Clearly, from the equation, the only factor is diffusion.