Draw the I- V characteristic curve of p- n junction in forward and reverse bias
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The circuit diagram to obtain the forward Characteristics of diode under forward bias is as shown in
It consists of dc voltage source and a Resistor 'R' connected in series with the diode. This Resistor act as '' as it limits the forward current to a value that will not over heat the diode and cause damage.
By varying , the readings of and are noted.
A graph is plotted by taking on X-axis and on Y-axis.
- Initially, current is small when the voltage across the diode is less than (i.e., in region OA), because the potential barrier prevents the holes from p-region and electrons from n-region, to flow across the Diode resistance in the opposite direction
- For > , the Diode resistance becomes thin and hence the holes cross the junction from p to n type and the electrons cross the junction in opposite direction, resulting in relatively large current flow in external circuit.
The circuit diagram to obtain the forward Characteristics of diode under reverse bias is as shown in
(It is similar to earlier, except that polarities of battery are reversed, Let it be now)
By varying , the readings of and are noted.
A graph is plotted by taking on X-axis and on Y-axis.
- As reverse voltage is increased, reverse current increases initially but after a certain voltage, the current remains constant and is equal to reverse saturation current (), though reverse voltage () is increased.
- Therefore, is current due to minority charge carriers and depends on Temperature rather than reverse voltage current ().
- But as the reverse voltage is further increased, diode breaks down which is shown by dotted line in the figure shown in attachment.
- Here, is the , which is the reverse voltage at which the junction breakdown occurs.
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