energy gap of si at room temperature
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Due to the fact that it is an indirect semiconductor with a relatively large direct band gap (3.2 eV), Si itself is not suited for the development of light emitters. An alternative and compatible material is Ge. ... The direct gap photoluminescence of Ge at a temperature of 2 K was measured already in 1978 [7].
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1.2ev
Explanation:
This energy is approximately equal to 1.2 eV in room temperature (i.e. at 300oK) which is equal to the band gap energy of silicon. In the intrinsic silicon crystal, the number of holes is equal to the number of free electrons.May 15, 2018
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