explain how potential brrier is set up across a p-n junction
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The potential difference required to move the electrons through the electric field is called the barrier potential. Barrier potential of a P-N junction depends on the type of semiconductor material, amount of doping and temperature. This is approximately 0.7V for silicon and 0.3 V for germanium.
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A p-n junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.
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