Find the concentration of holes and electrons in p-type silicon at 300 k if the conductivity is 100(ω-cm)
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which refers to either the intrinsicelectronorhole concentration. Commonly accepted values of ni atT =300°K.Silicon. 1.5 x 1010cm-3. Gallium arsenide. 1.8 x 106cm-3. Germanium. 2.4 x 1013cm-3.
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