How q factor is calculate in lspr effect of semiconductor?
Answers
Answer:
The epitaxial structures were grown by molecular beam epitaxy (MBE) on Te-doped (100)-GaSb substrates. After oxide desorption, a 500 nm thick GaSb buffer layer was grown at 500 °C. Then, a 100 nm-thick layer of Si-doped InAs0.91Sb0.09 was grown at 450 °C. Four samples with different doping levels of 1.5 × 1019 cm−3, 2.2 × 1019 cm−3, 4.7 × 1019 cm−3 and 5.5 × 1019 cm−3 labeled as A, B, C and D respectively, were selected to evaluate the role of the doping level on tuning the LSPR. The doping level, and thus the plasma frequency, was determined by an optical technique based on the Brewster mode [25].
The epitaxial structures were grown by molecular beam epitaxy (MBE) on Te-doped (100)-GaSb substrates. After oxide desorption, a 500 nm thick GaSb buffer layer was grown at 500 °C. Then, a 100 nm-thick layer of Si-doped InAs0.91Sb0.09 was grown at 450 °C. Four samples with different doping levels of 1.5 × 1019 cm−3, 2.2 × 1019 cm−3, 4.7 × 1019 cm−3 and 5.5 × 1019 cm−3 labeled as A, B, C and D respectively, were selected to evaluate the role of the doping level on tuning the LSPR. The doping level, and thus the plasma frequency, was determined by an optical technique based on the Brewster mode [25].Structural and optical characterizations of the nanoribbons were performed by means of scanning electron microscopy (SEM), atomic force microscopy (AFM) and reflection spectroscopy experiments. Plan- and cross-sectional view images were obtained using a SEM-Inspect S-50 with a typical electron-beam energy of 20 kV. AFM measurements were done in tapping mode with standard Si tips in 2.5 μm × 10 μm surface at 1 μm s–1 scanning speed.
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Answer:
The increase in particle size is expected for strong E-field enhancement on the NP surfaces. It was indicated that the Q-factor values in the LSPR peaks were attributed to the electronic and crystalline properties. On the other hand, the LSPR peak positions were independent of particle size.