How relate doping concentration and electron concentration?
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Let's assume for clarity that the semiconductor is n-type Si doped with a shallow donor impurity P in concentration Nd = 10^14
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✔️✔️EF on the band diagram is a function of temperature and carrier concentration.
66 illustrates the temperature dependence of the carrier concentration in a doped semiconductor.
Si doped with a shallow donor impurity P in concentration Nd = 10^14
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