Question

If a semiconductor has an intrinsic carrier concentration of 1.41 × 1016/m3, when doped with 1021/m3 phosphorous atoms, then the concentration of holes/m3 at room temperature will be (a) 2 × 1021 (b) 2 × 1011 (c) 1.41 × 1010 (d) 1.41 × 1016

Answer 1

Answer:

option c

d

Explanation:

Droping wil increasse the number of electrons only nad not the holes. So, number of holes will be equal to number of intrinsic carrier concentration.

=1.41×1016/m3

Answer 2

Answer:

Concentration = 1.41 × 10¹⁶/m³

Explanation:

We know that,

Doping will increase the number of electrons only and not the holes.

So,

Number of holes will be equal to number of intrinsic carrier concentration

i.e.,

Concentration = 1.41 × 10¹⁶/m³