if the length of the intrinsic region in IMPATT diode is 2 um and the carrier drift velocity are 10000000 cm/s ,then the normal frequency of the diode is:
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if the length of the intrinsic region in IMPATT diode is 2 um and the carrier drift velocity are 10000000 cm/s ,then the normal frequency of the diode is:
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IMPATT diodes can be fabricated using silicon, germanium, GaAs or indium phosphide. Out of these materials, GaAs have highest efficiency, low noise and high operating frequencies. But GaAs has a major disadvantage of complex fabrication process and higher cost. So, GaAs are not preferred over silicon and germanium.
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