In GaAs MESFETs is the substrate is doped with cr which has an energy level near the centre of GaAs band gap.the structure is called
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uctduc u ucch gyi glti fyfuf
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Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure.
Gallium arsenide
Samples of gallium arsenide
Gallium Arsenide (GaAs) 2" wafer.jpg
GaAs wafer of (100) orientation
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