Computer Science, asked by madi23, 11 months ago

Paragraph on dr robbert h dennard​

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Answered by nitin7777
0

Dennard was born in Terrell, Texas, U.S.. He received his B.S. and M.S. degrees in Electrical Engineering from Southern Methodist University, Dallas, in 1954 and 1956, respectively. He earned a Ph.D. from Carnegie Institute of Technology in Pittsburgh, Pennsylvania, in 1958. His professional career was spent as a researcher for International Business Machines.

In 1966 he invented dynamic random-access memory (DRAM), for which a patent was issued in 1968. Dennard was also among the first to recognize the tremendous potential of downsizing MOSFETs. The scaling theory he and his colleagues formulated in 1974 postulated that MOSFETs continue to function as voltage-controlled switches while all key figures of merit such as layout density, operating speed, and energy efficiency improve – provided geometric dimensions, voltages, and doping concentrations are consistently scaled to maintain the same electric field. This property underlies the achievement of Moore's Law and the evolution of microelectronics over the last few decades.

Answered by nithiya26
0

Robert H. Dennard has played a key role in two of the most groundbreaking innovations of the microelectronics industry. His work on the one-transistor memory cell led the way to readily available, inexpensive, high-density memory, which has transformed the industry Further, the principles he helped to develop for scaling MOSFET devices are so ubiquitous that they are now commonly referred to simply as "the scaling laws."

Dennard joined the IBM Research Division in 1958, where his early experience included the study of new devices and circuits for logic and memory applications, and the development of advanced data communication techniques. Since joining the IBM Thomas J. Watson Research Center, in Yorktown Heights, New York, in 1963 he has been involved in microelectronics research and development. His primary work there has been in MOSFETs and integrated digital circuits that use them. His accomplishments include pioneering the dynamic RAM memory cell used in most computers today, and playing a key role in the development of the concept of MOSFET scaling. He has held many titles at IBM, and is currently an IBM Fellow in the Silicon Technology Department. He has been issued 26 U.S. patents, and has 77 published technical papers or articles to his name.

Dennard was born in Terrell, Texas, on 5 September 1932. He received his B.S. and M.S. degrees in Electrical Engineering from Southern Methodist University, Dallas, in 1954 and 1956, respectively He earned a Ph.D. from Carnegie Institute of Technology

in Pittsburgh, Pennsylvania, in 1958.

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