Question

Pure Si at 500K has equal number of electron ($n_{e}$) and hole ($n_{h}$) concentrations of 1.5 × 10¹⁶ m⁻³. Doping by indium increases v to 4.5 × 10²² m⁻³. The doped semiconductor is of
(a) n–type with electron concentration $n_{e}=5\times 10^{22}\ m^{-3}$
(b) p–type with electron concentration $n_{e}=2.5\times 10^{10}\ m^{-3}$
(c) n–type with electron concentration $n_{e}=2.5\times 10^{23}\ m^{-3}$
(d) p–type having electron concentration $n_{e}=5\times 10^{9}\ m^{-3}$

Answer 1

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HIGH RATED GABRU---HARSH

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YOUR ANSWER IS OPTION---D

Answer 2

Hello Friend

The answer of u r question

Option.D

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