Question

Question:


If a semiconductor has an intrinsic carrier concentration of 1.41 × 1016/m3, when doped with 1021/m3 phosphorous atoms, then the concentration of holes/m3 at room temperature will be

(a) 2 × 1021

(b) 2 × 1011

(c) 1.41 × 1010

(d) 1.41 × 1016​

Answer 1

$\huge\red{Answer}$

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• Doping will increase the number of electrons only and not the holes.

• So, number of holes will be equal to number of intrinsic carrier concentration i.e., 1.41 × 1016/m3.

• option D is right answer

jai siya ram☺ __/\__

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Answer 2

Explanation:

\huge\red{Answer}Answer

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Doping will increase the number of electrons only and not the holes.

So, number of holes will be equal to number of intrinsic carrier concentration i.e., 1.41 × 1016/m3.

option D is right answer

jai siya ram☺ __/\__

➡️➡️➡️➡️➡️➡️➡️➡️➡️➡️➡️➡️➡️➡️➡️➡️➡️

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