Question:
If a semiconductor has an intrinsic carrier concentration of 1.41 × 1016/m3, when doped with 1021/m3 phosphorous atoms, then the concentration of holes/m3 at room temperature will be
(a) 2 × 1021
(b) 2 × 1011
(c) 1.41 × 1010
(d) 1.41 × 1016
Answers
Answered by
1
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- Doping will increase the number of electrons only and not the holes.
- So, number of holes will be equal to number of intrinsic carrier concentration i.e., 1.41 × 1016/m3.
- option D is right answer
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Answered by
8
Explanation:
\huge\red{Answer}Answer
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Doping will increase the number of electrons only and not the holes.
So, number of holes will be equal to number of intrinsic carrier concentration i.e., 1.41 × 1016/m3.
option D is right answer
jai siya ram☺ __/\__
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