Silicon diode is fabricated by starting with an n type substrate with doping and =10^16 per centimeter cube into which indium is diffused to form a p type region doped 10^18 per centimeter cube assuming an abrupt p+ n region junction is formed by the diffusion process calculate the fermi level position
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=10^16 per centimeter cube into which indium is diffused to form a p type region doped 10^18 per centimeter cube as
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