Question

Sketch the energy band diagrams of a MOS capacitor with N-type silicon substrate and N+ poly-Si gate at flat band, accumulation, in depletion, at threshold and in inversion

Answer 1

The industry has been leading with right solution and it includes MOS structure for accessing with inversion channel.

Both the negative and positive terminals are placed with poly silicon and able to identify with further results and band bending process for charge accumulation.

It should heavily dope in it and analysed with depletion function.

Answer 2

Answer:

Aɴsᴡᴇʀ :

• The industry has been leading with right solution and it includes MOS structure for accessing with inversion channel.
• Both the negative and positive terminals are placed with poly silicon and able to identify with further results and band bending process for charge accumulation.
• It should heavily dope in it and analysed with depletion function.