Stacked top gate dielectrics in dual gate ion sensitive field effect transistors: role of interfaces
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Abstract. Dual gate ion sensitive field effect transistors (DGISFETs) have elicited interest due to the capability to provide pH sensitivity values several times the Nernst limit. ... The simulated and theoretical values of the pH sensitivities were utilized to benchmark the experimental results.
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Abstract. Dual gate ion sensitive field effect transistors (DGISFETs) have elicited interest due to the capability to provide pH sensitivity values several times the Nernst limit. ... The simulated and theoretical values of the pH sensitivities were utilized to benchmark the experimental results.
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