Statement-1 : The direction of diffusion current in a junction diode is from n-region to p-region. Statement-2 : The majority current carrier diffuse from a region of higher concentration to a region of lower concentration.
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Answer: When a forward bias is applied to p-n junction after a certain voltage (called cut in voltage i.e for silicon it is 0.7v and for geremenium it is 0.3v) then the p-n junction diode is in turn on condition i.e. the depletion layer is diminished and current flow.Nov 14, 2015
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