Question

the width of forbidden gap in silicon crystal is 1.1eV.When the crystal is converted into n type semiconductor,then the distance of fermi energy level from conduction band is
1. equal to 0.55eV
2. equal to 1.1eV
3. less than 0.55eV
4. greater than 0.55eV​
plz answer

Answer 1

Explanation:

THE BRAINLIEST ANSWER!

itzshrutiBasrani Genius

Fermi level in intrinsic semiconductor lies in middle of the energy forbidden gap .

                       In case of silicon it is at .55eV ,but when it doped with pentavalent

           n-type semiconductor fermi energy level  rises up just below conduction 

                       band  so that electron can easily  move to conduction band . 

                       So energy gap in fermi level and conduction band will be less than .55eV

                        Option 3 is correct

Read more on Brainly.in - https://brainly.in/question/17272811#readmore