What is the energy gap of gallium arsenide?
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Band structure of GaAs. The direct gap of GaAs results in efficient emission of infrared light at 1.424 eV (~870 nm).
Band gap: 1.424 eV (at 300 K)
Crystal structure: Zinc blende
Lattice constant: a = 565.35 pm
Electron mobility: 8500 cm2/(V·s) (at 300 K)
hope it helps!!
Band gap: 1.424 eV (at 300 K)
Crystal structure: Zinc blende
Lattice constant: a = 565.35 pm
Electron mobility: 8500 cm2/(V·s) (at 300 K)
hope it helps!!
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