Question

Which of the following statement is true :
(1) Doping of pure Ge with a trivalent impurity given n-type semiconductor
(2) Resistivity of pure Ge increases with temperature
(3) Majority carriers in p type semiconductor are holes
(4) Doping of pure Ge with a pentavalent impurity increases its resistivity​

Answer 1

Answer:

(3)Majority carriers in p type semiconductor are holes.

Explanation:

1.A P-type semiconductor is formed when a tetravalent impurity(Si, Ge) is doped with a trivalent impurity(B, Ga)

2.Holes are the majority charge carriers and electrons are minority charge carriers in P-type semiconductors

3.An n-type Semiconductor is formed when a tetravalent impurity(Si, Ge) is doped with a Pentavalent impurity(P,Sb)

4.Electrons are the majority charge carriers in the n-type semiconductor and holes are minority charge carriers.

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