Question

Why base region of transistor is made thin and lightly doped?

Answer 1

The Base region of transistor is made thin and lightly doped

Reason to make Base thin

If the Base is thin the majority charge carriers (elecrons or holes) can easily move from Emitter to Collector. That's our goal.

Reason to make Base lightly doped

doping is of two types N-type (arsenic, phosphorus, or antimony) and P-type (boron, gallium, and aluminum).

N-type has high number of free electrons and P-type has high number of holes.

For easy flow of electrons or holes we make Emitter or Collector highly doped and Base lightly doped.

we know same charge opposes and opposite charge attracts each other. If we make Base highly doped, it will become barrier for electrons or holes and there will no flow of electrons resulting no flow of current.

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Answer 2

Reason for the base region of transistor is made thin and lightly doped:

• The purposely making of a thing base region in a certain transistor is because the majority carriers easier to move by finding themselves closer to the base collector Junction.
• And hence will move to the area of collector instead of turning their direction towards the base terminal.
• The doping of this reagent is very light to enable a very low resistance by giving it a very small and thin depletion region and hence supporting the flow of majority carriers to the collector area.

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