Question

why is zener diode fabricated by heavily doping both p and n side of the junction briefly explain.​

Answer 1

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due to this depletion region formed in general diode is very thin and the electric field across the junction is very high even for a small reverse Bias Voltage this high electric field pulls the valence electron from the host atom on p side this electron accelerated to n side and constituent large current.

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Answer 2

Answer:

Due to the heavy doping, the depletion layer becomes very thin and electric field, across the junction, becomes very high even for a small reverse bias voltage.

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