Question

The diffusion current in a p-n junction is
(a) from the n-side ot the p-side
(b) from the p-side to the n-side
(c) from the n-side to the p-side if the junction is forward-biased and in the opposite direction if it is reverse-biased
(d) from the p-side to the n-side if the junction is forward and in the opposite direction if it is reverse-biased.

Answer 1

$\huge{\boxed{\boxed{\bf{\red{Hello!!!:}}}}}$

from the n-side ot the p-side

Answer 2

Answer:

$\red{(b)from\:the\:p-side\:to\:the\:n-side}$

Explanation:

• In p - n junction, the electron gets diffuses from n side to p side at the boundary of n - type and p- type semiconductors.

• Due to this diffusion, a potential difference is created there.

• That potential difference is named as potential barrier.

• And the layer of this potential difference is named as potential layer.

• At depletion layer, a current constitues due to diffusion of electron from n - side to p- side named as diffusion current and it's direction is from p - side to n - side.