Question

The drift current in a p-n junction is
(a) from the n-side to the p-side
(b) from the p-side to the n-side
(c) from the p-side to the side if the junction is forward-biased and the opposite direction if it is reverse-biased
(d) from the p-side to the n-side if the junction is forward-baised and in the opposite direction if it is reverse-biased.

Answer 1

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from the n-side ot the p-side

Answer 2

Because of the aggregation of immobile ions at the junction, an electrical field is built up after the diffusion of majority carriers charge through a p -n junction.

Explanation:

Option (a) is correct

• Because of the aggregation of immobile ions at the junction, an electrical field is built up after the diffusion of majority carriers charge through a p -n junction. Those additionally resist the majority carrier charge motion around the junction.
• Electrons from the region p begin traveling to the region n and holes from the region n begin moving to the region p. This constitutes the velocity of the wave. Since the path of the current is opposite to that of the electrons 'motion, the path of the drift current is from the n side to the p side.
• During forward biasing, electrons from the p region to the n region and holes from the n region to the p region do not pass. Therefore, there is no current of drift. therefore option (a) is right.

To know more about drift current in a p-n junction, visit:

Diffusion current in a p-n junction is greater than the drift current in magnitude (a) if the junction is forward-biased?

https://brainly.in/question/5357368

Drift current in the semiconductors depends upon

(A) only the electric field

(B) only the carrier concentration gradient

(C) both the electric field and the carrier concentration

(D) both the electric field and the carrier concentration gradient

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