When a p-n junction is forward biased the barrier height will
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When a diode is connected in a Forward Bias condition, a negative voltage is applied to the N-type material and a positive voltage is applied to the P-type material. If this external voltage becomes greater than the value of the potential barrier, approx.
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When a pn junction is forward biased then the Barrier height will decrease .
The p side is connected to positive terminal while n side to negative.
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