Why do oxide layer is used in the cmos fabrication at every stage?
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Oxidation layering — this optional step deposits a thin layer of SiO2 over the complete
wafer by exposing it to a mixture of high-purity oxygen and hydrogen at ±
1000°C. The oxide is used as an insulation layer and also forms transistor gates.
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oxidation layering the optional step deposits a thin layer of Sio2 over the complete water by exposing it to a mixture of high-purity oxygen and hydtogen unto 1000°C. the oxidation is used in insulation layers and also forms transister gates
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